N+ silicon solar cells emitters realized using phosphoric acid as doping source in a spray process

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dc.contributor.authorBouhafs, D.
dc.contributor.authorMoussi, A.
dc.contributor.authorBoumaour, M.
dc.contributor.authorAbaidia, Seddik-El-Hak
dc.contributor.authorMahiou, L.
dc.date.accessioned2015-04-22T09:29:19Z
dc.date.available2015-04-22T09:29:19Z
dc.date.issued2006
dc.description.abstractThe spray technique is used to realize the n+ emitter from phosphoric acid H3PO4 as a doping source. Emulsions have been prepared using several organic solvents. It was found that H3PO4:2-butanol mixture provides the most uniform deposited layer. The sheet resistance and the n+ profile were measured with a four point probe and the Hall profiling, respectively. The variety of emitters obtained are characterized by a sheet resistance ranging from 10 to 86 Ω/□ and a junction depth of about 0.2 to 0.7 μm which can be adequate for emitters in a polycrystalline silicon solar cell processen_US
dc.identifier.urihttps://dspace.univ-boumerdes.dz/handle/123456789/466
dc.language.isoenen_US
dc.relation.ispartofseriesThin Solid Films/ Vol.510, N°1-2 (2006);pp. 325-328
dc.subjectSolar cellsen_US
dc.subjectSiliconen_US
dc.subjectPhosphorousen_US
dc.subjectSpray depositionen_US
dc.titleN+ silicon solar cells emitters realized using phosphoric acid as doping source in a spray processen_US
dc.typeArticleen_US

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