Simulation of electrical parameters of perovskite a solar cell under SCAPS 1D and QUCS

Abstract

Due to their lower cost of production and ability to be used with flexible substrates, perovskite solar cells have received a lot of interest recently. Various parameters contribute to the stability and performance of perovskite solar cells: the configuration or the structure of the cells, the materials used in their elaboration such as the active layer, the hole transport layer, the electron transport layer and the electrode contact. This work represents the modelling and simulation of perovskite solar cells using two software: SCAPS 1D (Solar Cell Capacitance Simulator one- dimensional), QUCS (Quite Universal Circuit Simulator). Firstly, two different perovskite solar cells of Lead-Based & Lead-Free structures were compared using SCAPS 1D and the effect of series and shunt resistance on their electrical parameters were studied. Secondly, an equivalent circuit model constituted from one diode, a series and shunt resistance, and a photocurrent generator have been used, this circuit is simulated under QUCS. The simulated results as function of different parameters such as the cell temperature, the ideality factor and the current saturation were calculated using SCAPS results. The current density as function of voltage (J-V characteristics) of the Lead-Free perovskite cell obtained from SCAPS results were compared to QUCS simulated results. The Lead-Free perovskite structure studied is Front contact/Cu 2 0/CH 3 NH 3 SnI 3 /TiO 2 /FTO/Back contact. At the end of this study, we optimize our cell by substituting the hole transport layer (Cu 2 O) by (CUI, ZnTe) to high efficiency. Finally, it has been found that the optimized cell is of the type: Front contact/ CUI /CH 3 NH 3 SnI 3 / TiO 2 /FTO/Back contact, with a best power conversion efficiency of 25.92%.