Geometric component in constant-amplitude charge-pumping characteristics of LOCOS- and LDD-MOSFET devices

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dc.contributor.authorTahi, H.
dc.contributor.authorDjezzar, B.
dc.contributor.authorBenabdelmoumen, A.
dc.contributor.authorNadji, B.
dc.date.accessioned2015-06-16T15:19:13Z
dc.date.available2015-06-16T15:19:13Z
dc.date.issued2011
dc.identifier.urihttps://dspace.univ-boumerdes.dz123456789/1969
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.relation.ispartofseriesIEEE Transactions on Device and Materials Reliability/ Vol.11, N°1;pp. 131-140
dc.subjectActive CP areaen_US
dc.subjectConstant-amplitude charge pumping (CP)en_US
dc.subjectGeometric componenten_US
dc.subjectLDD-MOSFETen_US
dc.titleGeometric component in constant-amplitude charge-pumping characteristics of LOCOS- and LDD-MOSFET devicesen_US
dc.typeArticleen_US

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