Experimental investigation of NBTI degradation in power VDMOS transistors under low magnetic field

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dc.contributor.authorTahi, Hakim
dc.contributor.authorTahanout, Cherifa
dc.contributor.authorBoubaaya, Mohamed
dc.contributor.authorDjezzar, Boualem
dc.contributor.authorMerah, Sidi Mohammed
dc.contributor.authorNadji, Bacharia
dc.contributor.authorSaoula, Nadia
dc.date.accessioned2017-05-09T10:52:03Z
dc.date.available2017-05-09T10:52:03Z
dc.date.issued2017
dc.identifier.issn1530-4388
dc.identifier.urihttps://dspace.univ-boumerdes.dz/handle/123456789/3565
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.relation.ispartofseriesIEEE Transactions on Device and Materials Reliability/ Vol.17, N°1(2017);pp. 99-105
dc.subjectMagnetic fieldsen_US
dc.subjectStressen_US
dc.subjectNegative bias temperature instabilityen_US
dc.subjectThermal variables controlen_US
dc.subjectDegradationen_US
dc.subjectIterative closest point algorithmen_US
dc.subjectCurrent measurementen_US
dc.titleExperimental investigation of NBTI degradation in power VDMOS transistors under low magnetic fielden_US
dc.typeArticleen_US

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