Bandwidth improvement of a single-stage distributed amplifier
| dc.contributor.author | Amrani, F. | |
| dc.contributor.author | Trabelsi, M. | |
| dc.contributor.author | Aksas, R. | |
| dc.contributor.author | Azrar, Arab | |
| dc.date.accessioned | 2015-04-09T11:18:30Z | |
| dc.date.available | 2015-04-09T11:18:30Z | |
| dc.date.issued | 2010 | |
| dc.description.abstract | The article discusses the use of bandwidth to improve single-stage distributed amplifier with the use of a Chebyshev polynomial to express the transducer power gain. It states that the conventional distributed amplifiers are formed by artificial transmissions and conventional single-stage distributed amplifier. In addition, the metal semiconductor field effect transistor has gate capacitance of the transistor to improve the bandwidth of the single-stage distributed amplifier | en_US |
| dc.identifier.uri | https://dspace.univ-boumerdes.dz/jspui/handle/123456789/215 | |
| dc.language.iso | en | en_US |
| dc.relation.ispartofseries | Microwave Journal/ Vol.53, N°5 (2010);p.p.112 | |
| dc.subject | Bandwidths | en_US |
| dc.subject | Distributed amplifiers | en_US |
| dc.subject | Chebyshev polynomials | en_US |
| dc.subject | Transducers | en_US |
| dc.subject | Metal semiconductor field-effect transistors | en_US |
| dc.subject | Gate array circuits | en_US |
| dc.subject | Electric capacity | en_US |
| dc.title | Bandwidth improvement of a single-stage distributed amplifier | en_US |
| dc.type | Article | en_US |
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