A rapid analysis of very short channel MOSFET performances by using a dynamic simple model

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dc.contributor.authorRabhi, A.
dc.contributor.authorBenhamadouche, A.
dc.contributor.authorCharlot, J.-J.
dc.date.accessioned2015-04-23T10:42:45Z
dc.date.available2015-04-23T10:42:45Z
dc.date.issued2010
dc.description.abstractA simplified MOSFET model is presented in this paper. The performances of the model, UNICELL (Unique Cell Model), are compared to those provided by BSIM3V3 taken as reference, even for very short channel length MOSFET (45 nm). It is shown that using only two UNICELL cells (BICELL) gives a good deal for CAD static and dynamic usage, because of the few number of parameters to be used in comparison to BSIM3. BICELL can also be used for determining internal performance analysisen_US
dc.identifier.urihttps://dspace.univ-boumerdes.dz/jspui/handle/123456789/539
dc.language.isoenen_US
dc.relation.ispartofseriesInternational Journal of microelectronic and computer science/ Vol.1, N°3 (2010);pp. 225-228
dc.subjectMOSFET Modelingen_US
dc.subjectBSIM3V3en_US
dc.subjectVERILOG-Aen_US
dc.titleA rapid analysis of very short channel MOSFET performances by using a dynamic simple modelen_US
dc.typeArticleen_US

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