Publications Scientifiques

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Author: search.filters.author.Tahanout, Cherifa

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    Simple and fast simulation approach to investigate the NBTI effect on suspended gate MOS devices
    (2019) Tahanout, Cherifa; Tahi, Hakim; Bouchera, Nadji; Hocini, Lotfi
    In this paper, we investigate the negative bias temperature instability(NBTI) on conventional P-type metal-oxide-semiconductorfield effecttransistors (PMOSFET) using on-fly bulk trap technique (OTFBT). Theextracted NBTI induced interface (ΔNit)andoxidetraps(ΔNot), usingOTFBT, are modelled and used to simulate the NBTI effect on N-typesuspended gate metal-oxide-semiconductor devices (N-type SG-MOS),which could be manufactured by thesamefabricationprocessasconventional PMOSFET. The used approach to simulate the NBTI effectis performed by combining, in the same simulation program, theN-type SG-MOS devices model with the NBTI inducedΔNitandΔNotmodels. This approach allowed us to simulate and predict rapidly thelifetime of the N-type SG-MOS devices subjected to the NBTI degrada-tion. The simulation shows that the degradation of N-type SG-MOSdevices due to the NBTI is the same as that of conventional PMOSFET.However, the extracted lifetime of N-type SG-MOS devices (stiction ofthe suspended gate) is longer than that of conventional PMOSFET.
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    Investigation of NBTI degradation on power VDMOS transistors under magnetic field
    (IEEE, 2014) Tahi, Hakim; Benmessai, Karim; Le Floch, Jean Michel; Boubaaya, Mohamed; Tahanout, Cherifa; Djezzar, Boualem; BENABDELMOMENE, Abdelmadjid; Goudjil, Mohamed; Chenouf, Amel
    In this paper, we report an experimental evidence of the impact of applied a low magnetic field (B<;100 Gauss) during negative bias temperature instability (NBTI) stress and recovery, on commercial power double diffused MOS transistor (VDMOS). We show that both interface (ΔN it ) and oxide trap (ΔN ot ) induced by NBTI stress decrease by applied magnetic field. This decrease is more pronounced as the magnetic field is high. In addition, the recovery of NBTI induced threshold voltage shift (ΔV th ) is relatively important with applied magnetic field.
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    Experimental Investigation of NBTI Degradation in Power VDMOS Transistors Under Low Magnetic Field
    (IEEE Transactions on Device and Materials Reliability ( Volume: 17, Issue: 1, March 2017), 2017) TAHI, Hakim; Tahanout, Cherifa; BOUBAAYA, Mohamed; Djezzar, Boualem; Merah, Sidi Mohammed; Nadji, Bacharia; SAOULA, Nadia
    In this paper, we report an experimental evidence of the impact of applied a low magnetic field (B <; 10 mT) during negative bias temperature instability (NBTI) stress and recovery, on commercial power double diffused MOS transistor. We show that both interface (ANit) and oxide trap (ANot) induced by NBTI stress are reduced by applying the magnetic field. This reducing is more pronounced as the magnetic field is high. However, the dynamic of interface trap during stress and recovery phase is not affected by the applied magnetic field. While, the dynamic of oxide trap is affected in both stress and recovery phases.
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    Charge Pumping,GeometricComponent and Degradation ParametersExtraction in MOSFETDevices
    (IEEE, 2015) Tahi, Hakim; Tahanout, Cherifa; Djezzar, Boualem Djezzar; Boubaaya, Mohamed; Abdelmadjid, Benabdelmoumene; Chenouf, Amel
    In this paper, we model the geometric component of charge pumping technique (CP). Base on this proposed model, wehave established ananalyticequation for charge pumping current. This equation seems to be an universal one since it is in agreement with CP experimental data of different technologies devices.Instead the classical considerations regarding a parasitic nature of the geometric component, we have demonstrated, in this work, that it can be used to estimate the negative bias temperature (NBTI)induced mobility degradationusing the charge pumping basedmethods such as on-the-fly interface trap (OTFIT).
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    Experimental investigation of NBTI degradation in power VDMOS transistors under low magnetic field
    (IEEE, 2017) Tahi, Hakim; Tahanout, Cherifa; Boubaaya, Mohamed; Djezzar, Boualem; Merah, Sidi Mohammed; Nadji, Bacharia; Saoula, Nadia
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    Oxide trap annealing by H2 cracking at e'center under NBTI stress
    (IEEE, 2012) Tahanout, Cherifa; Nadji, Becharia; Tahi, Hakim; Djezzar, Boualem; Benabdelmoumene, Abdelmadjid; Chenouf, Amel
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    An accurate combination of on-the-fly interface trap and threshold voltage methods for NBTI degradation extraction
    (Springer, 2014) Tahanout, Cherifa; Tahi, Hakim; Djezzar, Boualem; Benabdelmomene, Abdelmadjid; Goudjil, Mohamed; Nadji, Becharia