Modeling and simulation of GTO switching characteristics

Abstract

This work presents a high power gate turn off thyristor (GTO) model based on a one-port negative differential resistance (NDR) circuit. the basic one-cell model of an elementary GTO consists of two complementary bipolar junction transistors connected in a feedback configuration and three linear resistors (2t-3r). the static and dynamic responses of the model are simulated using the SPICE software program.the 2t-3r- circuit model is found to satisfactorily describe the GTO switching characteristics but falls short to predict the tail current transient effect...