Modeling and simulation of GTO switching characteristics
| dc.contributor.author | Achour, Ahmed | |
| dc.date.accessioned | 2015-06-10T10:39:56Z | |
| dc.date.available | 2015-06-10T10:39:56Z | |
| dc.date.issued | 2000 | |
| dc.description | 110 p. : ill. ; 30 cm | en_US |
| dc.description.abstract | This work presents a high power gate turn off thyristor (GTO) model based on a one-port negative differential resistance (NDR) circuit. the basic one-cell model of an elementary GTO consists of two complementary bipolar junction transistors connected in a feedback configuration and three linear resistors (2t-3r). the static and dynamic responses of the model are simulated using the SPICE software program.the 2t-3r- circuit model is found to satisfactorily describe the GTO switching characteristics but falls short to predict the tail current transient effect... | en_US |
| dc.identifier.uri | https://dspace.univ-boumerdes.dz123456789/1583 | |
| dc.language.iso | en | en_US |
| dc.subject | Semiconducteurs de puissance | en_US |
| dc.subject | Power semiconductors | en_US |
| dc.subject | Simulation, méthodes de | en_US |
| dc.subject | Simulation methods | en_US |
| dc.title | Modeling and simulation of GTO switching characteristics | en_US |
| dc.type | Thesis | en_US |