Measurement of Square Resistance In Situ of SnO2: F Thin Film With Annealing at High Temperature Under Air

dc.contributor.author	Tahi, Hakim
dc.contributor.author	Boumaour, Messaoud
dc.contributor.author	Tala-Ighil, Razika
dc.contributor.author	Belkaid, M. S.
dc.date.accessioned	2021-02-18T06:36:16Z
dc.date.available	2021-02-18T06:36:16Z
dc.date.issued	2008
dc.description.abstract	Thin films of fluorine doped tin oxide (SnO2: F), deposited by spray pyrolysis on silicon substrate, were characterized by the method of four points probe in situ during annealing at high temperature under air. The evolution of square resistance (in situ) with the annealing temperature was interpreted in terms of competition between electronic conduction and ionic conduction. A square resistance of 136�/□ is measured before annealing and after annealing at 900°C, the square resistance increases appreciably to reach 40k�/□. This increase is explained by the absorption of oxygen at the films surface and an increase in SiO2 thickness at interface SnO2/Si	en_US
dc.identifier.issn	1970-4097
dc.identifier.uri	https://dspace.univ-boumerdes.dz/handle/123456789/6447
dc.language.iso	en	en_US
dc.publisher	ICTP	en_US
dc.relation.ispartofseries	African Physical Review (2008) 2 Special Issue (Microelectronics): 0042;
dc.subject	Measurement	en_US
dc.subject	Under Air	en_US
dc.title	Measurement of Square Resistance In Situ of SnO2: F Thin Film With Annealing at High Temperature Under Air	en_US
dc.type	Article	en_US

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