A semi numerical approach for semiconductor devices physical modeling
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Date
2009
Journal Title
Journal ISSN
Volume Title
Publisher
IEEE
Abstract
In this work, the developed mathematical extension of the semi analytical Method of Lines (MoL) for the solution of Poisson's equation which governs the voltage distribution within semiconductor devices is adapted to fit realistic considerations related to the geometry and the electrodes configuration of such structures. The obtained tool is then applied to find the potential profile within a MOS capacitor in deep depletion mode
Description
Keywords
Deep depletion, Mathematical extensions, Numerical approaches, Physical modeling, Poisson's equation, Potential profiles, Semi-analytical methods, Voltage distribution, Models, MOS capacitors, Poisson distribution, Semiconductor device manufacture, Semiconductor switches, Semiconductor device structures
Citation
2009 International Conference on Advances in Computational Tools for Engineering Applications, ACTEA 2009; Beirut; Lebanon; 15 July 2009 through 17 July 2009; Category numberCFP0945G; Code 78008