A semi numerical approach for semiconductor devices physical modeling

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dc.contributor.authorDehmas, Mokrane
dc.contributor.authorAzrar, A.
dc.contributor.authorRecioui, Abdelmadjid
dc.contributor.authorChallal, Mouloud
dc.date.accessioned2015-06-25T12:25:51Z
dc.date.available2015-06-25T12:25:51Z
dc.date.issued2009
dc.description.abstractIn this work, the developed mathematical extension of the semi analytical Method of Lines (MoL) for the solution of Poisson's equation which governs the voltage distribution within semiconductor devices is adapted to fit realistic considerations related to the geometry and the electrodes configuration of such structures. The obtained tool is then applied to find the potential profile within a MOS capacitor in deep depletion modeen_US
dc.identifier.citation2009 International Conference on Advances in Computational Tools for Engineering Applications, ACTEA 2009; Beirut; Lebanon; 15 July 2009 through 17 July 2009; Category numberCFP0945G; Code 78008en_US
dc.identifier.isbn978-142443834-1
dc.identifier.urihttps://dspace.univ-boumerdes.dz123456789/2101
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.relation.ispartofseries2009 International Conference on Advances in Computational Tools for Engineering Applications, ACTEA 2009 2009, Article number 5227928;pp.146-150
dc.subjectDeep depletionen_US
dc.subjectMathematical extensionsen_US
dc.subjectNumerical approachesen_US
dc.subjectPhysical modelingen_US
dc.subjectPoisson's equationen_US
dc.subjectPotential profilesen_US
dc.subjectSemi-analytical methodsen_US
dc.subjectVoltage distributionen_US
dc.subjectModelsen_US
dc.subjectMOS capacitorsen_US
dc.subjectPoisson distributionen_US
dc.subjectSemiconductor device manufactureen_US
dc.subjectSemiconductor switchesen_US
dc.subjectSemiconductor device structuresen_US
dc.titleA semi numerical approach for semiconductor devices physical modelingen_US
dc.typeArticleen_US

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