Oxide trap annealing by H2 cracking at e'center under NBTI stress

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dc.contributor.authorTahanout, Cherifa
dc.contributor.authorNadji, Becharia
dc.contributor.authorTahi, Hakim
dc.contributor.authorDjezzar, Boualem
dc.contributor.authorBenabdelmoumene, Abdelmadjid
dc.contributor.authorChenouf, Amel
dc.date.accessioned2016-03-07T12:08:31Z
dc.date.available2016-03-07T12:08:31Z
dc.date.issued2012
dc.identifier.urihttps://dspace.univ-boumerdes.dz/handle/123456789/2757
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.relation.ispartofseries;pp. 1-4
dc.subjectMOSFETen_US
dc.subjectAnnealingen_US
dc.subjectHole trapsen_US
dc.subjectHydrogenen_US
dc.subjectNegative bias temperature instabilityen_US
dc.subjectSemiconductor device modelsen_US
dc.subjectSemiconductor device reliabilityen_US
dc.titleOxide trap annealing by H2 cracking at e'center under NBTI stressen_US
dc.typeOtheren_US

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