Oxide charges densities determination using charge-pumping technique with BTS in MOS structures

Abstract

A New electrical method, using charge-pumping (CP) technique under bias thermal stress (BTS), has been described in this paper. This technique is based on the charge-pumping measurement which in turn used to extract the flat-band voltage before and after an applied bias voltage at high temperature. The obtained flat band voltage shift, that is due to redistribution of the mobile ionic charges, or to generation of the oxide trapped charge or both, may be used to determine their densities