Oxide charges densities determination using charge-pumping technique with BTS in MOS structures

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dc.contributor.authorBentarzi, Hamid
dc.contributor.authorZitouni, Abdelkader
dc.contributor.authorKribes, Youcef
dc.date.accessioned2015-04-22T12:28:02Z
dc.date.available2015-04-22T12:28:02Z
dc.date.issued2008
dc.description.abstractA New electrical method, using charge-pumping (CP) technique under bias thermal stress (BTS), has been described in this paper. This technique is based on the charge-pumping measurement which in turn used to extract the flat-band voltage before and after an applied bias voltage at high temperature. The obtained flat band voltage shift, that is due to redistribution of the mobile ionic charges, or to generation of the oxide trapped charge or both, may be used to determine their densitiesen_US
dc.identifier.issn1109-9445
dc.identifier.urihttps://dspace.univ-boumerdes.dz/jspui/handle/123456789/507
dc.language.isoenen_US
dc.relation.ispartofseriesWSEAS TRANSACTIONS/ Vol.5, N°4 (2008) on ELECTRONICS;pp. 101-110
dc.subjectOxide chargesen_US
dc.subjectCharge pumping techniqueen_US
dc.subjectFlat-band voltageen_US
dc.subjectBias thermal stress techniqueen_US
dc.subjectMobile ionic charge densityen_US
dc.subjectOxide chargeen_US
dc.subjectOxide trapped charge densityen_US
dc.titleOxide charges densities determination using charge-pumping technique with BTS in MOS structuresen_US
dc.typeArticleen_US

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