Experimental investigation of the charge pumping current in integrated MOS transistors

Simple item page
dc.contributor.authorRahmoune, Fayçal
dc.date.accessioned2015-06-10T09:20:38Z
dc.date.available2015-06-10T09:20:38Z
dc.date.issued1998
dc.description80 p. : ill. ; 30 cmen_US
dc.description.abstractThe aim of this work is the investigation of the charge pumping technique through the variation of the gate voltage pulse width. The main part of this work is related to the investigation of the carge pumping current of MOSFETS and its dependence on the time and voltage parameters of the input gate pulses…en_US
dc.identifier.urihttps://dspace.univ-boumerdes.dz123456789/1550
dc.language.isoenen_US
dc.subjectMOS (électronique)en_US
dc.subjectMetal oxide semiconductorsen_US
dc.titleExperimental investigation of the charge pumping current in integrated MOS transistorsen_US
dc.typeThesisen_US

Files

Original bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
Rahmoune Faycal.pdf
Size:
2.38 MB
Format:
Adobe Portable Document Format
Download

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

Magister