Communications Internationales
Permanent URI for this collectionhttps://dspace.univ-boumerdes.dz/handle/123456789/11
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Item Traveling wave antennas optimization using genetic algorithms(IEEE, 2008) Recioui, Abdelmadjid; Azrar, Arab; Dehmas, Mokrane; Challal, Mouloud; Bentarzi, HamidItem On low noise amplifier design for wireless communication systems(IEEE, 2008) Challal, Mouloud; Azrar, Arab; Bentarzi, Hamid; Recioui, Abdelmadjid; Dehmas, Mokrane; Vanhoenacker-Janvier, DanielleItem Analysis and synthesis of a K-band microstrip patch antenna array(IEEE, 2009) Challal, Mouloud; Azrar, Arab; Dehmas, Mokrane; Recioui, AbdelmadjidItem Combating multiple access interference in wireless communication systems employing smart antennas(IEEE, 2009) Recioui, Abdelmadjid; Bentarzi, Hamid; Azrar, Arab; Dehmas, Mokrane; Challal, MouloudSmart Antennas constitute a promising technology in wireless communication systems as they mitigate multiple access interference through spatial filtering. One basic building block of smart antennas is the antenna array itself. This latter generates a wide range of aspects that can be the subject of deep investigations namely their geometry, physical parameters, feeding techniques etc... Hence, it is important to investigate whether certain array geometry will enable optimal performance. In this work, the effect of the array geometry choice on the interference rejection capability is investigated. Linear and circular array geometries are considered with mutual coupling between real antenna elements taken into account. Assessment of both geometries is done through a figure of merit that takes into account the rejection capability and radiation characteristics of the arrayItem A semi numerical approach for semiconductor devices physical modeling(IEEE, 2009) Dehmas, Mokrane; Azrar, A.; Recioui, Abdelmadjid; Challal, MouloudIn this work, the developed mathematical extension of the semi analytical Method of Lines (MoL) for the solution of Poisson's equation which governs the voltage distribution within semiconductor devices is adapted to fit realistic considerations related to the geometry and the electrodes configuration of such structures. The obtained tool is then applied to find the potential profile within a MOS capacitor in deep depletion mode