Communications Internationales

Permanent URI for this collectionhttps://dspace.univ-boumerdes.dz/handle/123456789/11

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End date: 2009Has files: No

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    Speed-up of high accuracy analog test stimulus optimization
    (1999) Khouas, Abdelhakim; Derieux, Anne
    Analog integrated circuit testing and diagnosis is a very challenging problem. The inaccuracy of measurements, the infinite domain of possible values and the parameter deviations are among the major difficulties. During the process of optimizing production tests, Monte Carlo simulation is often needed due to parameter variations, but because of its...
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    Contact Resistance Determination For Multi-crystalline Silicon Solar Cells By Using Transmission Line Method (TLM)
    (2008) Tala-Ighil, Razika; Sali, S.; Oussalah, Slimane; Boumaour, Messaoud
    he main objective in solar cells realization consists in increasing their performances. The mechanisms of this increase obey specific phenomena of physics. There is necessarily a contact resistance value behind each value of conversion efficiency. The question is how to quantify the contact resistance and what is its behaviour with different temperature profiles and consequently with the conversion efficiency. This work responds to all of these questions. We have taken square multicrystalline silicon wafers of 10 cm sides. These wafers have followed the traditional process steps i.e.: chemistry, diffusion, silicon nitride PECVD deposition and metallization of the front grid with TLM (Transmission Line Method) mask. The TLM measures are obtained using a test bench which includes a four-point prober and an analyzer. The contact resistance is deduced by the plot of the resistance versus the TLM line distance. It represents the R(D2), R(D3), R(D23), R(D4) and R(D34) where D2, D3, D23, D4 and D34 are the TLM distances. The TLM resistance is the half of the intersection of the slope R(D) with the y-axis. A profile of the evolution of the contact resistance versus the screen printing temperature annealing from 650°C to 800°C for the multi-crystalline silicon solar cells has been obtained.
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    Optical properties of fluorine doped tin oxide annealed under air
    (2006) Tala-Ighil, Razika; Boumaour, Messaoud; Maallemi, A.; Melhani, K.
    Fluorine doped tin oxide thin film was deposited as window layer on diffused mono- crystalline silicon wafers (100) for photovoltaic purposes. At the time of screen printing metallization (1), thin films SnO2: F is confronted to an annealing under air for temperatures beyond 800°C. In order to study the optical properties of this transparent and conductive oxide TCO, thin film SnO2: F is deposited with spray pyrolysis technique on quartz blades to support the annealing of the screen printing metallization at high temperatures. Measured spectra of transmittance and reflectance are obtained by using the characterization by spectrophotometry from the Ultra-Violet to the Near-Infrared range wavelength. One can proceed to the optical parameters calculation by using the numerical and iterative Mueller method (2) to solve the non-linear equations
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    Séparation Des Phases Dans Le Système sio2- B2O3- Na2O (ISBN)
    (2009) Aboutaleb, Djamila; Iratni, A.; Safi, Brahim; Douglad, J.
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    Extension of the hybridization weight function approach to corner cracks
    (2009) Hachi, B.K.; Rechak, S.; Haboussi, M.; Nour, Abdelkader; Maurice, G.