Publications Internationales
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Item Single pulse charge pumping technique improvement for interface-states profiling in the channel of MOSFET devices(IEEE Transactions on Electron Devices, 2023) Messaoud, DhiaElhak; Djezzar, Boualem; Boubaaya, Mohamed; Benabdelmoumene, Abdelmadjid; Zatout, Boumediene; Chenouf, Amel; Zitouni, AbdelkaderThis paper presents the separated single pulse charge pumping (SSPCP) technique, an improvement over conventional single pulse charge pumping (CSPCP) for analyzing metal oxide semiconductor field-effect transistor (MOSFET) degradation. SSPCP separates the measurement of source and drain currents (Is and Id ), enabling the localization of interface traps (Nit) near these regions. Experimental validation shows that SSPCP achieves comparable results to CSPCP with a maximum measurement error of 5%. The technique is particularly useful for studying stress-induced localized degradation profiling, allowing for the exploration of non-uniform stress (e.g., hot-carrier injection) and uniform stress (e.g., negative bias temperature instability) in transistors with short channels. SSPCP effectively analyzes localized degradation and identifies differences in stress-induced degradation between the source and drain regions, making it a valuable tool in semiconductor device characterization.Item Single Pulse Charge Pumping Technique Improvement for Interface-States Profiling in the Channel of MOSFET Devices(2023) Messaoud, Dhia Elhak; Djezzar, Boualem; Boubaaya, Mohamed; Benabdelmoumene, Abdelmadjid; Zatout, Boumediene; Chenouf, Amel; Zitouni, AbdelkaderThis paper presents the separated single pulse charge pumping (SSPCP) technique, an improvement over conventional single pulse charge pumping (CSPCP) for analyzing metal oxide semiconductor field-effect transistor (MOSFET) degradation. SSPCP separates the measurement of source and drain currents $({I}_{ {s}}$ and ${I}_{ {d}}$ ), enabling the localization of interface traps $({N}_{ {it}})$ near these regions. Experimental validation shows that SSPCP achieves comparable results to CSPCP with a maximum measurement error of 5%. The technique is particularly useful for studying stress-induced localized degradation profiling, allowing for the exploration of non-uniform stress (e.g., hot-carrier injection) and uniform stress (e.g., negative bias temperature instability) in transistors with short channels. SSPCP effectively analyzes localized degradation and identifies differences in stress-induced degradation between the source and drain regions, making it a valuable tool in semiconductor device characterization.Item Fast methods for studying the effect of electrical stress on SiO2 dielectrics in Metal-Oxide-Semiconductor Field-Effect transistors(Pleiades Publishing, 2023) Messaoud, Dhia Elhak; Djezzar, Boualem; Boubaaya, Mohamed; Chenouf, Amel; Benabdelmoumene, Abdelmadjid; Zatout, Boumediene; Zitouni, AbdelkaderThis work implements three fast measurement techniques based on the measure–stress–measure (MSM) method. These techniques, namely, measuring–around–, one–point on–the–fly (OTF), and pulsed current-voltage (PIV), were used to characterize three different technologies of metal–oxide–semiconductor field-effect transistors (MOSFETs) with same gate dielectric silicon–dioxide (SiO2) and various thicknesses = 20 nm, 4 nm, 2.3 nm. Moreover, well–configured electrical stress biasing has been performed to discuss the dielectric degradation of these devices using those characterization techniques. The pros and cons of the used techniques are well discussed based on our results. Furthermore, experimental results showed that threshold voltage shift () follows a power law time dependence with time exponent (n) being 0.16 for molecular hydrogen (H2) diffusing species and 0.25 for hydrogen atoms (H) diffusing species. We have found that the thicker the SiO2 dielectric the more the oxide traps () contribute to the resulting degradation. However, the dependency between SiO2 dielectric thickness and oxide traps could not be necessarily linear.Item Metal-oxide-semiconductor field-effect transistor (MOSFET) pulsed current-voltage characterization technique: design and discussion(Pleiades Publishing, 2023) Messaoud, Dhia Elhak; Djezzar, Boualem; Boubaaya, Mohamed; Benabdelmoumene, Abdelmadjid; Zatout, Boumediene; Chenouf, Amel; Zitouni, AbdelkaderIn this paper, we implement the pulsed current–voltage (PIV) technique for the metal-oxide-semiconductor field-effect transistor (MOSFET) device’s ultrafast characterization based on the OpAmp amplifier OPA818. The latter dropped down the measurement time for a whole MOSFET characteristic to = 50 ns as an enhancement. Furthermore, a study concerning the technique’s dependency on measurement time (), channel length (), and channel width () is accomplished. It is found that the distortion in the technique’s results, labeled as hysteresis, is inversely proportional to measurement time and it increases dramatically with very low values of . Also, the results show that PIV could have a somehow direct proportionality to channel length, and it is justified by the gate/drain capacitance () effect. On the other hand, the technique shows no dependency on channel width at all. Moreover, as measurements limitations, the results couldn’t record drain currents less than ≈ 10–7 A, this makes PIV limited to the study of threshold voltage degradation () only. However, this issue is well discussed and solutions have been proposed.Item Distance relay reliability enhancement using false trip root cause analysis(Springer, 2017) Zitouni, Abdelkader; Ouadi, Abderrahmane; Bentarzi, Hamid; Chafai, MahfoudItem Seminumerical technique for the analysis of integrated semiconductor devices(1994) Dehmas, Mokrane; Zitouni, Abdelkader; Bourdoucen, H.Item Quasi-static MoL-based approach for the analysis of multilayer transmission line structures(John Wiley & Sons, 1997) Zitouni, Abdelkader; Bourdoucen, H.; Nait Djoudi, T.Item Field-Programmable gate array based tester for protective relay(2017) Bentarzi, Hamid; Zitouni, AbdelkaderItem Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system(2009) Bourdoucen, H.; Zitouni, AbdelkaderItem Oxide charges densities determination using charge-pumping technique with BTS in MOS structures(2008) Bentarzi, Hamid; Zitouni, Abdelkader; Kribes, YoucefA New electrical method, using charge-pumping (CP) technique under bias thermal stress (BTS), has been described in this paper. This technique is based on the charge-pumping measurement which in turn used to extract the flat-band voltage before and after an applied bias voltage at high temperature. The obtained flat band voltage shift, that is due to redistribution of the mobile ionic charges, or to generation of the oxide trapped charge or both, may be used to determine their densities